2002. 6. 17
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTK5131E
Revision No : 0
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
2.5 Gate Drive.
Low Threshold Voltage : V
th
=0.51.5V.
High Speed.
Small Package.
Enhancement-Mode.
MAXIMUM RATING (Ta=25)
DIM
MILLIMETERS
A
B
D
E
ESM
1.60 0.10
0.85 0.10
0.70 0.10
0.27+0.10/-0.05
1.60 0.10
1.00 0.10
0.50
0.13 0.05
C
G
H
J
1
3
2
E
B
D
A
G
H
C
J
1. SOURCE
2. GATE
3. DRAIN
+
_
+
_
+
_
+
_
+_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25)
Marking
K A
Type Name
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GSS
20
V
DC Drain Current
I
D
50
mA
Drain Power Dissipation
P
D
100
mW
Channel Temperature
T
ch
150
Storage Temperature Range
T
stg
-55150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Gate Leakage Current
I
GSS
V
GS
=16V, V
DS
=0V
-
-
1
A
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
=100A, V
GS
=0V
30
-
-
V
Drain Cut-off Current
I
DSS
V
DS
=30V, V
GS
=0V
-
-
1
A
Gate Threshold Voltage
V
th
V
DS
=3V, I
D
=0.1mA
0.5
-
1.5
V
Forward Transfer Admittance
|Y
fs
|
V
DS
=3V, I
D
=10mA
20
-
-
mS
Drain-Source ON Resistance
R
DS(ON)
I
D
=10mA, V
GS
=2.5V
-
15
40
Input Capacitance
C
iss
V
DS
=3V, V
GS
=0V, f=1MHz
-
5.5
-
pF
Reverse Transfer Capacitance
C
rss
V
DS
=3V, V
GS
=0V, f=1MHz
-
1.6
-
pF
Output Capacitance
C
oss
V
DS
=3V, V
GS
=0V, f=1MHz
-
6.5
-
pF
Switching
Time
Turn-on Time
t
on
V
DD
=3V, I
D
=10mA, V
GS
=02.5V
-
140
-
nS
Turn-off Time
t
off
-
140
-
nS
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
D
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
EQUIVALENT CIRCUIT
2002. 6. 17
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KTK5131E
Revision No : 0
D
R
D
R
A
I
N
R
E
V
E
R
S
E
C
U
R
R
E
N
T
I
(
m
A
)
DRAIN-SOURCE VOTAGE V (V)
DS
DS
DR
I - V
DRAIN-SOURCE VOLTAGE V (V)
D
R
A
I
N
C
U
R
R
E
N
T
I
(
m
A
)
D
0
DS
0
I - V
D
DS
DRAIN CURRENT I (mA)
F
O
R
W
A
R
D
T
R
A
N
S
F
E
R
A
D
M
I
T
T
A
N
C
E
1
3
D
Y - I
DRAIN-SOURCE VOLTAGE V (V)
D
R
A
I
N
C
U
R
R
E
N
T
I
(
m
A
)
D
DS
(LOW VOLTAGE REGION)
2
COMMON SOURCE
Ta=25 C
V =1.2V
GS
0.2
0
0
0.1
Ta=25 C
COMMON SOURCE
V =0.95V
GS
fs
D
f
s
Y
(
m
S
)
3
5
10
30
50
100
5
10
30
50
100
COMMON
SOURCE
V =3V
DS
4
6
8
10
12
10
20
30
40
50
60
1.4
1.6
1.8
2.0
2.2
2.5
0.2
0.3
0.4
0.5
0.6
0.4
0.6
0.8
1.0
1.2
I - V
DS
D
1.0
1.05
1.1
1.2
2.5
0.9
0.8
0.01
0
0.03
0.1
0.3
1
3
10
50
COMMON SOURCE
V =0
GS
30
Ta=25 C
D
I
S
G
DR
D
R
A
I
N
C
U
R
R
E
N
T
I
(
m
A
)
GATE-SOURCE VOTAGE V (V)
GS
1
0.01
0
0.03
0.3
0.1
1
3
Ta=-25 C
COMMON SOURCE
D
50
30
10
I - V
D
V =3V
GS
GS
2
3
4
5
Ta=100 C
Ta=25 C
Ta=25 C
C
A
P
A
C
I
T
A
N
C
E
C
(
p
F
)
0.5
DRAIN-SOURCE VOLTAGE V (V)
DS
C - V
DS
1
3
5
10
30
V =0
f=1MHz
Ta=25 C
GS
20
10
0.3
100m
0.5
1
3
5
COMMON SOURCE
C
iss
C
oss
rss
C
-0.4
-0.8
-1.2
-1.6